2SC5148 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC5148 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总3页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5148
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1500
600
V
5
V
Collector Current- Continuous
Collector Current-Pulse
Base Current- Continuous
8
16
A
ICP
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5148
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 10mA ; IB= 0
600
V
IC= 5A; IB= 1.3A
5.0
1.3
1.0
10
V
V
VCE
(sat)
IC= 5A; IB= 1.3A
VBE
(sat)
ICBO
VCB= 1500V ; IE= 0
VEB= 5V ; IC= 0
mA
μA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
DC Current Gain
IC= 1A ; VCE= 5V
8
25
DC Current Gain
IC= 5A ; VCE= 5V
3.8
8.0
Current-Gain—Bandwidth Product
Output Capacitance
IC= 0.1A ; VCE= 10V
IE= 0 ; VCB= 10V; ftest= 1.0MHz
2
MHz
pF
COB
110
Switching times
Storage Time
4.0
0.3
μs
μs
tstg
ICP= 4A , IB1= 0.8A ; fH= 64kHz
Fall Time
tf
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5148
isc Website：www.iscsemi.cn
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