2SD1412Y [ISC]
Transistor;
| 型号： | 2SD1412Y |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 开关 局域网 |
| 文件： | 总2页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1412
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC= 4A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
·Complement to Type 2SB1019
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
70
V
V
V
A
A
50
5
Collector Current-Continuous
Base Current-Continuous
7
IB
1
2
Collector Power Dissipation
@ Ta=25℃
PC
W
Collector Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
℃
℃
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1412
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 50mA ; IB= 0
50
IC= 4A; IB= 0.4A
IC= 4A; IB= 0.4A
VCB= 70V; IE= 0
0.4
1.2
30
V
)
sat
V
VBE(
)
sat
ICBO
IEBO
hFE-1
hFE-2
COB
fT
μA
μA
Emitter Cutoff Current
VEB= 5V; IC= 0
50
DC Current Gain
IC= 1A; VCE= 1V
IC= 4A; VCE= 1V
IE= 0; VCB= 10, ftest= 1MHz
IC= 1A; VCE= 4V
70
0
240
DC Current Gain
Output Capacitance
250
10
pF
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-on Time
0.2
2.5
0.5
μs
μs
μs
ton
tstg
tf
IB1= -IB2= 0.3A;
RL= 10Ω; VCC= 30V
Storage Time
Fall Time
hFE classifications
O
Y
70-140
120-240
2
isc Website：www.iscsemi.cn
相关型号：
2SD1415A
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
TOSHIBA
©2020 ICPDF网 联系我们和版权申明