2SD1459 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1459 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1459
DESCRIPTION
·With TO-220 package
·High allowable collector dissipation.
·Complement to type 2SB1037
APPLICATIONS
·Color TV vertical output application
·Sound output application
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
150
150
5
UNIT
V
V
V
A
A
Open base
Open collector
1.5
ICM
Collector current-peak
3.0
2.0
PC
Collector power dissipation
W
TC=25℃
30
Tj
Junction temperature
Storage temperature
175
-55~175
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1459
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-offcurrent
CONDITIONS
MIN
TYP
MAX
UNIT
V
IC=10mA ; IB=0
150
IC=0.5A, IB=50mA
IC=0.5A, IB=50mA
VCB=120V;IE=0
VEB=5V;IC=0
1.5
1.2
10
V
V
μA
μA
IEBO
Emitter cut-offcurrent
10
hFE
DC current gain
IC=0.3A ; VCE=5V
IC=0.1A ; VCE=5V
70
200
fT
Transition frequency
8
MHz
hFE classifications
Q
R
70-140
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1459
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1459
4
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