2SD1562D [ISC]
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| 型号： | 2SD1562D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 开关 局域网 |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB1085/1085A
·High transition frequency
APPLICATIONS
·For low freuqency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
120
160
120
160
5
UNIT
2SD1562
2SD1562A
2SD1562
2SD1562A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
1.5
ICM
Collector current-peak
3.0
TC=25℃
Ta=25℃
20
PC
Collector power dissipation
W
1.5
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
120
160
120
160
5
TYP.
MAX
UNIT
2SD1562
2SD1562A
2SD1562
2SD1562A
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA; IB=0
V
Collector-base
breakdown voltage
V(BR)CBO
IC=50μA; IE=0
IE=50μA; IC=0
V
V(BR)EBO
VCEsat
VBEsat
ICBO
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=1 A;IB=0.1 A
2.0
1.5
1.0
1.0
320
200
Base-emitter on saturation voltage
Collector cut-off current
IC=1 A;IB=0.1 A
VCB=120V; IE=0
VEB=4V; IC=0
V
μA
μA
IEBO
Emitter cut-off current
2SD1562
DC current gain
60
60
hFE
IC=0.1A ; VCE=5V
2SD1562A
fT
Transition frequency
Output capacitance
IE=-0.1A ; VCE=5V
80
20
MHz
pF
COB
IE=0 ; VCB=10V;f=1MHz
hFE classifications
TYPE
D
E
F
2SD1562
2SD1562A
60-120
60-120
100-200
100-200
160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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