2SD1563A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1563A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1563A
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB1086A
·Wide area of safe operation
·High breakdown voltage :BVCEO=160V(min)
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
160
160
5
UNIT
V
V
V
A
A
Open base
Open collector
1.5
ICM
Collector current-peak
3.0
TC=25℃
Ta=25℃
10
PC
Collector power dissipation
W
1.2
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1563A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
V(BR)CBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
160
5
TYP.
MAX
UNIT
V
IC=1mA ;IB=0
IE=50μA ;IC=0
V
IC=50μA ;IE=0
160
V
IC=1.0A ;IB=0.1A
IC=1.0A ;IB=0.1A
VCB=120V; IE=0
VEB=4V; IC=0
2.0
1.5
1.0
1.0
270
V
V
μA
μA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=0.1A ; VCE=5V
IC=0.1A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
56
fT
Transition frequency
80
20
MHz
pF
COB
Output capacitance
hFE Classifications
N
P
Q
56-120
82-180
120-270
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1563A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
2SD1563A/N
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