2SD1705 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1705 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1705
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.)@ IC= 6A
·Complement to Type 2SB1154
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
130
80
V
V
V
A
A
7
Collector Current-Continuous
Collector Current-Pulse
10
ICP
20
Collector Power Dissipation
@ TC=25℃
70
PC
W
Collector Power Dissipation
@ Ta=25℃
3
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1705
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
IC= 10mA; IB= 0
80
V
IC= 6A; IB= 0.3A
IC= 10A; IB= 1A
IC= 6A; IB= 0.3A
IC= 10A; IB= 1A
VCB= 100V; IE= 0
VEB= 5V; IC= 0
0.5
1.5
1.5
2.5
10
V
V
VCE
VCE
VBE
VBE
(sat)-1
(sat)-2
(sat)-1
(sat)-2
V
V
ICBO
μA
μA
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter Cutoff Current
50
DC Current Gain
IC= 0.1A; VCE= 2V
IC= 3A; VCE= 2V
IC= 6A; VCE= 2V
IC= 0.5A; VCE= 10V
45
90
30
DC Current Gain
260
DC Current Gain
Current-Gain—Bandwidth Product
20
MHz
Switching Times
Turn-on Time
0.5
2.0
0.2
μs
μs
μs
ton
tstg
tf
IC= 6A, IB1= -IB2= 0.6A;
VCC= 50V
Storage Time
Fall Time
hFE-2Classifications
Q
P
90-180
130-260
2
isc Website：www.iscsemi.cn
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