2SD1855D [ISC]
Transistor;
| 型号： | 2SD1855D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 开关 局域网 |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1855
DESCRIPTION
·
·With TO-220Fa package
·Complement to type 2SB1335
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
80
Open base
60
V
Open collector
6
4
V
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1855
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
60
80
6
TYP.
MAX
UNIT
V
IC=1mA; IB=0
IC=50μA; IE=0
IE=50μA; IC=0
IC=3A ;IB=0.3A
IC=3A ;IB=0.3A
VCB=80V; IE=0
VEB=6V; IC=0
V
V
1.0
1.5
10
V
V
μA
μA
IEBO
Emitter cut-off current
10
hFE
DC current gain
IC=1A ; VCE=5V
IC=0.5A; VCE=5V
f=1MHz ; VCB=10V
60
320
fT
Transition frequency
8
MHz
pF
COB
Collector output capacitance
90
hFE Classifications
D
E
F
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1855
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
相关型号：
2SD1856K
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
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