2SD2029 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SD2029 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2029
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1347
·Wide area of safe operation
·High transition frequency
APPLICATIONS
·Optimum for the output stage of a
Hi-Fi audio amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PL) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
160
160
5
UNIT
Open emitter
Open base
V
V
V
A
A
Open collector
12
ICM
Collector current-peak
20
Ta=25℃
TC=25℃
3.5
PC
Collector power dissipation
W
120
150
-55~150
Tj
Junction temperature
Storage temperature
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2029
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA ;IB=0
160
IC=8A ;IB=0.8A
2.0
1.8
50
V
IC=8A ; VCE=5V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=160V; IE=0
μA
μA
IEBO
VEB=3V; IC=0
50
hFE-1
hFE-2
hFE-3
fT
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
20
60
20
DC current gain
200
DC current gain
IC=8A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=5V;f=1MHz
IE=0;f=1MHz;VCB=10V
20
MHz
pF
COB
Collector output capacitance
210
hFE-2 classifications
Q
S
P
60-120
80-160
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2029
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2029
4
相关型号:
2SD2030BRF
Small Signal Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN
HITACHI
2SD2030BRR
Small Signal Bipolar Transistor, 0.1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN
HITACHI
©2020 ICPDF网 联系我们和版权申明