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2SD2399

更新时间：2025-07-03 07:59:59

品牌：ISC

描述：isc Silicon NPN Power Transistor

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中文翻译

免费 PCB/SMT

概述
数据手册

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2SD2399 概述

isc Silicon NPN Power Transistor ISC的硅NPN功率晶体管

2SD2399 数据手册

通过下载2SD2399数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC2139

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 400V (Min)

·High Switching Speed

APPLICATIONS

·Switching regulator and high voltage switching applications.

·High speed DC-DC converter applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

MAX

500

400

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@T_C=25℃

P_C

100

150

-65~150

℃

T_j

Junction Temperature

T_stg

Storage Temperature Range

isc Website：www.iscsemi.cn

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC2139

ELECTRICAL CHARACTERISTICS

T_C=25℃ unless otherwise specified

SYMBOL

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

PARAMETER

CONDITIONS

MIN

400

500

TYP.

MAX

UNIT

Collector-Emitter Breakdown Voltage I_C= 10mA; I_B= 0

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

I_C= 1mA; I_E= 0

I_E= 1mA; I_C= 0

I_C= 5A; I_B= 0.5A

I_C= 5A; V_CE= 5V

V_CB= 400V; I_E= 0

V_EB= 6V; I_C= 0

1.5

2.0

V_CE

(sat)

V_BE

(sat)

h_FE

I_CBO

Collector Cutoff Current

0.1

1.0

I_EBO

Emitter Cutoff Current

Switching Times

Rise Time

1.0

2.0

1.0

μs

t_r

t_stg

t_f

V_CC= 200V; I_B1= -I_B2= 0.5A;

R_L= 40Ω

Storage Time

Fall Time

isc Website：www.iscsemi.cn

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