2SD2399 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SD2399 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
500
400
6
UNIT
V
V
V
Collector Current-Continuous
Base Current-Continuous
10
A
IB
2
A
Collector Power Dissipation
@TC=25℃
PC
100
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2139
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
400
500
6
TYP.
MAX
UNIT
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V
V
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IC= 1mA; IE= 0
IE= 1mA; IC= 0
IC= 5A; IB= 0.5A
IC= 5A; IB= 0.5A
IC= 5A; VCE= 5V
VCB= 400V; IE=
VEB= 6V; IC= 0
1.5
2.0
VCE
(sat)
VBE
(sat)
hFE
10
ICBO
Collector Cutoff Current
0.1
1.0
mA
mA
IEBO
Emitter Cutoff Current
Switching Times
Rise Time
1.0
2.0
1.0
μs
μs
μs
tr
tstg
tf
VCC= 200V; IB1= -IB2= 0.5A;
RL= 40Ω
Storage Time
Fall Time
isc Website：www.iscsemi.cn
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