2SD334R [ISC]
Transistor;
| 型号： | 2SD334R |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD334
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
UNIT
V
110
80
V
7
V
Collector Current-Continuous
Base Current-Continuous
6
3
A
IB
A
Collector Power Dissipation
@TC=25℃
PC
75
W
℃
℃
Tj
Junction Temperature
150
-65~150
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD334
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
80
7
TYP. MAX UNIT
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
V
V
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IE= 1mA ; IC= 0
IC= 5A; IB= 0.5A
IC= 1A ; VCE= 4V
VCB= 40V; IE= 0
2
2.5
50
1
V
V
VCE
(sat)
VBE
(on)
μA
mA
ICBO
Collector Cutoff Current
DC Current Gain
V
CB= 110V; IE= 0
hFE
IC= 1A ; VCE= 4V
40
260
hFE Classifications
R
O
Y
40-80
70-150
130-260
isc Website：www.iscsemi.cn
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