2SD750Q [ISC]
Transistor;
| 型号： | 2SD750Q |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD750
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·High Current Capability
APPLICATIONS
·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
110
80
UNIT
V
V
7
V
Collector Current-Continuous
Collector Current-Peak
15
A
ICM
30
A
Collector Power Dissipation
@TC=25℃
PC
100
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
MIN
80
7
TYP. MAX UNIT
IC= 10mA; IB= 0
V
V
IE= 5mA; IC= 0
IC= 5A; IB= 0.5A
IC= 5A; VCE= 4V
VCB= 40V; IE= 0
IC= 1A; VCE= 4V
IC= 5A; VCE= V
IC= 0.5A; VCE= 10V
2.0
1.5
30
V
V
VCE
(sat)
(on)
VBE
ICBO
Collector Cutoff Current
μA
hFE-1
hFE-2
fT
DC Current Gain
40
30
DC Current Gain
120
Current-Gain—Bandwidth Product
1
MHz
hFE-2 Classifications
Q
P
O
30-60
40-80
60-120
isc Website：www.iscsemi.cn
相关型号：
2SD755DTZ
Small Signal Bipolar Transistor, 0.05A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92MOD, 3 PIN
HITACHI
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