2SD866A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD866A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD866 2SD866A
DESCRIPTION
·
·With TO-220C package
·Low collector saturation voltage
·Excellent linearity of hFE
·High collector current
APPLICATIONS
·For power switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
130
150
80
UNIT
2SD866
2SD866A
2SD866
2SD866A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
100
7
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
7
ICM
PC
Tj
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
15
A
TC=25℃
40
W
℃
℃
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD866 2SD866A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
80
TYP.
MAX
UNIT
2SD866
Collector-emitter
breakdown voltage
V(BR)CEO
IC=0.2A; IB=0
V
2SD866A
100
VCEsat
VBEsat
ICBO
IEBO
Collector-emitter saturation voltage IC=5 A;IB=0.25 A
0.5
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5 A;IB=0.25 A
VCB=100V; IE=0
VEB=5V; IC=0
V
μA
μA
50
hFE-1
hFE-2
fT
IC=0.1A ; VCE=2V
IC=3A ; VCE=2V
IC=0.5A ; VCE=10V
45
60
DC current gain
260
Transition frequency
30
MHz
Switching times
ton
Turn-on time
0.5
1.5
0.1
μs
μs
μs
IC=3A;IB1=-IB2=0.3 A
ts
Storage time
Fall time
tf
hFE-2 classifications
R
Q
P
60-120
90-180
130-260
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD866 2SD866A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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