BD138 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD138 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD136 BD138 BD140
DESCRIPTION
·
·With TO-126 package
·High current
·Complement to type BD135/137/139
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-45
UNIT
BD136
BD138
BD140
BD136
BD138
BD140
VCBO
Collector-base voltage
Open emitter
Open base
V
-60
-100
-45
VCEO
Collector-emitter vltage
V
-60
-100
-5
VEBO
IC
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Open collector
V
A
-1.5
-2
ICM
IBM
Pt
A
-1
A
Total power dissipation
Junction temperature
Storage temperature
T
mb≤70℃
8
W
℃
℃
℃
Tj
150
-65~150
-65~150
Tstg
Tamb
Operating ambient temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
Thermal resistance from junction to ambient
100
K/W
Rth j-mb
Thermal resistance from junction to mounting base
10
K/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD136 BD138 BD140
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-0.5
-1.0
-100
-10
UNIT
V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE
Base-emitter voltage
IC=-500mA ; VCE=-2V
VCB=-30V; IE=0
V
nA
μA
nA
ICBO
Collector cut-off current
VCB=-30V; IE=0 Tj=125℃
VEB=-5V; IC=0
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
-100
IC=-5mA ; VCE=-2V
40
DC current gain
BD136-10;BD138-10;BD140-10
BD136-16;BD138-16;BD140-16
63
63
100
250
160
250
IC=-150mA ; VCE=-2V
IC=-500mA ; VCE=-2V
IC=-50mA; VCE=-5V ;f=100MHz
DC current gain
25
Transition frequency
160
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD136 BD138 BD140
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BD138-10
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD138-10LEADFREE
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD138-16
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CDIL
BD138-16-BP
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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