BD139 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD139 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD135 BD137 BD139
DESCRIPTION
·
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BD135
BD137
BD139
BD135
BD137
BD139
45
VCBO
Collector-base voltage
Open emitter
Open base
V
60
100
45
VCEO
Collector-emitter vltage
V
60
100
VEBO
IC
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Open collector
5
V
A
1.5
ICM
IBM
Pt
2
1
A
A
Total power dissipation
Junction temperature
Storage temperature
T
mb≤70℃
8
W
℃
℃
℃
Tj
150
Tstg
Tamb
-65~150
-65~150
Operating ambient temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
100
UNIT
K/W
K/W
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
10
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD135 BD137 BD139
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
0.5
UNIT
V
IC=0.5A; IB=50mA
VBE
IC=500mA ; VCE=2V
VCB=30V; IE=0
1.0
V
100
10
nA
μA
nA
ICBO
Collector cut-off current
VCB=30V; IE=0 Tj=125℃
VEB=5V; IC=0
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
100
IC=5mA ; VCE=2V
40
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
63
63
100
250
160
250
IC=150mA ; VCE=2V
IC=500mA ; VCE=2V
IC=50mA; VCE=5V ;f=100MHz
DC current gain
25
Transition frequency
190
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD135 BD137 BD139
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BD139-10-T60-K
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC
BD139-16
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD139-16-T60-K
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
UTC
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