概述
规格参数
数据手册BD202F 概述
isc Silicon PNP Power Transistor ISC的硅PNP功率晶体管 其他晶体管
BD202F 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.58 |
| Is Samacsys： | N | Base Number Matches： | 1 |
BD202F 数据手册
通过下载BD202F数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD202F/204F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD202F
-60V(Min)- BD204F
·Complement to Type BD201F/203F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-60
UNIT
BD202F
BD204F
BD202F
BD204F
VCBO
Collector-Base Voltage
V
-60
-45
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-60
VEBO
IC
ICM
IB
-5
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-8
-12
A
-3
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
60
W
℃
℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
6.3 ℃/W
Thermal Resistance, Junction to Case
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD202F/204F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-45
-60
-60
-5
MAX
UNIT
BD202F
BD204F
Collector-Emitter
Breakdown Voltage
V(BR)CEO
IC= -0.2A ;IB= 0
V
V(BR)CBO
V(BR)EBO
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -1mA ;IE= 0
V
V
IE= -1mA ;IC= 0
IC= -3A; IB= -0.3A
IC= -6A; IB= -0.6A
IC= -6A; IB= -0.6A
IC= -3A ; VCE= -2V
VCE= -30V; IB= 0
-1.0
-1.5
-2.0
-1.5
-0.2
V
V
V
V
)
on
ICEO
ICBO
IEBO
Collector Cutoff Current
mA
mA
mA
VCB= VCBO;IE= 0
-0.1
-1.0
Collector Cutoff Current
VCB= 1/2VCBO;IE= 0; TJ= 150℃
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5
BD202F
DC Current Gain
IC= -3A ; VCE= -2V
hFE-1
30
BD204F
IC= -2A ; VCE= -2V
hFE-2
fT
DC Current Gain
IC= 11A ; VCE= -2V
30
Current-Gain—Bandwidth Product
7.0
MHz
IC= -0.3A ; VCE= -3V, ftest= 1.0MHz
Switching Times
Turn-On Time
Turn-Off Time
1
2
μs
μs
ton
toff
IC= -2A; IB1= -IB2= -0.2A
2
isc Website：www.iscsemi.cn
BD202F 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BD202_12 | COMSET | SILCON EPITAXIAL-BASE POWER TRANSISTORS | 获取价格 |
|
| BD203 | CDIL | Medium Power Switching and Amplifier Applications | 获取价格 |
|
| BD203 | VISHAY | EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS | 获取价格 |
|
| BD203 | SAVANTIC | Silicon NPN Power Transistors | 获取价格 |
|
| BD203 | ISC | isc Silicon NPN Power Transistor | 获取价格 |
|
| BD203 | COMSET | SILCON EPITAXIAL-BASE POWER TRANSISTORS | 获取价格 |
|
| BD203 | NJSEMI | GP BJT | 获取价格 |
|
| BD203F | ISC | isc Silicon NPN Power Transistor | 获取价格 |
|
| BD204 | VISHAY | EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS | 获取价格 |
|
| BD204 | SAVANTIC | Silicon PNP Power Transistors | 获取价格 |
|
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