BD243C [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD243C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD243/A/B/C
DESCRIPTION
·
·With TO-220C package
·Complement to type BD244/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VAL
45
UNIT
BD243
BD243A
BD243B
BD243C
BD243
60
VCBO
Collector-base voltage
Open emitter
V
80
100
45
BD243A
BD243B
BD243C
60
VCEO
Collector-emitter voltage
Open base
V
80
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
V
A
6
Collector current-peak
Base current
10
A
2
A
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
65
W
℃
℃
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD243/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BD243
BD243A
BD243B
BD243C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter on voltage
IC=6A;IB=1 A
1.5
2.0
V
V
IC=6A ; VCE=4V
VCE=30V; IB=0
BD243/A
Collector cut-off current
BD243B/C
ICEO
0.7
mA
VCE=60V; IB=0
BD243
VCE=45V; VBE=0
VCE=60V; VBE=0
VCE=80V; VBE=0
VCE=100V; VBE=0
VEB=5V; IC=0
BD243A
Collector cut-off current
BD243B
ICES
0.4
mA
mA
BD243C
Emitter cut-off current
DC current gain
IEBO
hFE-1
hFE-2
1
IC=0.3A ; VCE=4V
IC=3A ; VCE=4V
30
15
DC current gain
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD243/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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