BD380 [ISC]
isc Silicon PNP Power Transistors; ISC的硅PNP功率晶体管
| 型号： | BD380 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistors |
| 文件： | 总2页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BD376/378/380
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@ IC= -1A
·Complement to Type BD375/377/379
APPLICATIONS
·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-50
UNIT
BD376
BD378
BD380
BD376
BD378
BD380
VCBO
Collector-Base Voltage
V
-75
-100
-45
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-60
-80
VEBO
IC
ICM
IB
-5
V
A
Collector Current-Continuous
Collector Current-Peak
-2
-3
A
Base Current-Continuous
-1
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
25
W
℃
℃
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BD376/378/380
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-45
TYP.
MAX UNIT
BD376
BD378
BD380
BD376
BD378
BD380
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= -100mA ; IB= 0
V
-60
-80
-50
VCBO
Collector-Base Voltage
IC= -0.1mA ; IE= 0
V
-75
-100
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD376
IC= -1A; IB= -0.1A
IC= -1A; VCE= -2V
VCB= -45V; IE= 0
VCB= -60V; IE= 0
VCB= -80V; IE= 0
VEB= -5V; IC= 0
-1.0
-1.5
-2
V
V
VCE(
)
sat
VBE(
)
on
ICBO
Collector Cutoff Current
μA
BD378
BD380
-2
-2
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
DC Current Gain
-0.1
375
mA
IC= -0.15A ; VCE= -2V
IC= -1A; VCE= -2V
40
20
DC Current Gain
Switching Times
Turn-On Time
Turn-Off Time
0.05
0.5
μs
μs
ton
toff
IC= -0.5A; IB1= -IB2= -50mA;
VCC= -30V
hFE-1 Classifications
6
10
16
25
40-100
63-160
100-250 150-375
2
isc Website：www.iscsemi.cn
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