BD501B [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | BD501B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD501/B
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min)
80V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
55
UNIT
BD501
VCBO
Collector-Base Voltage
V
BD501B
BD501
85
50
VCEO
Collector-Emitter Voltage
V
BD501B
80
VEBO
Emitter-Base Voltage
5
V
A
IC
Collector Current-Continuous
10
Collector Power Dissipation
@ TC=25℃
PC
75
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.39
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BD501/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
50
TYP.
MAX
UNIT
BD501
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 30mA ;IB= 0
V
BD501B
BD501
80
IC= 5A; IB= 0.5A
IC= 3.5A; IB= 0.35A
IC= 5A; VCE= 4V
IC= 3.5A; VCE= 4V
VCB= 55V;IE= 0
Collector-Emitter
Saturation Voltage
1.0
1.6
V
V
VCE
(sat)
BD501B
BD501
Base-Emitter On Voltage
VBE(
)
on
BD501B
ICBO
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
1.0
1.0
90
mA
mA
VCB= 85V;IE= 0
IEBO
hFE
fT
VEB= 5V; IC= 0
BD501
IC= 5A; VCE= 4V
IC= 3.5A; VCE= 4V
IC= 1.0A ; VCE= 10V
15
BD501B
Current-Gain—Bandwidth Product
8
MHz
2
isc Website：www.iscsemi.cn
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