BD543A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD543A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD543/A/B/C
DESCRIPTION
·
·With TO-220C package
·Complement to type BD544/A/B/C
·8 A continuous collector current
·10 A peak Collector current
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BD543
40
60
BD543A
BD543B
BD543C
BD543
VCBO
Collector-base voltage
Open emitter
V
80
100
40
BD543A
BD543B
BD543C
60
VCEO
Collector-emitter voltage
Open base
V
80
100
5
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
8
ICM
PC
Tj
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
10
A
TC=25℃
70
W
℃
℃
-65~150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD543/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD543
CONDITIONS
MIN
40
TYP.
MAX
UNIT
BD543A
BD543B
BD543C
60
Collector-emitter
breakdown voltage
V(BR)CEO
IC=30mA ;IB=0
V
80
100
VCEsat-1
VCEsat-2
VCEsat-3
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
IC=3A ;IB=0.3A
IC=5A ;IB=1A
0.5
0.5
1
V
V
V
V
IC=8A ;IB=1.6A
IC=5A ; VCE=4V
VCE=30V;IB=0
1.6
BD543/543A
Collector
ICEO
0.7
1
mA
mA
cut-off current
BD543B/543C
V
CE=60V;IB=0
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
VEB=5V; IC=0
IC=1A ; VCE=4V
IC=3A ; VCE=4V
IC=5A ; VCE=4V
60
40
15
Switching times
ton Turn-on time
toff Turn-off time
0.6
1.0
μs
μs
IC=6A;
IB1=-IB2=0.6A
RL=5Ω
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD543/A/B/C
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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