BD546C [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BD546C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD546/A/B/C
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -40V(Min)- BD546; -60V(Min)- BD546A
-80V(Min)- BD546B; -100V(Min)- BD546C
·Complement to Type BD545/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-40
UNIT
BD546
BD546A
BD546B
BD546C
BD546
-60
VCBO
Collector-Base Voltage
V
-80
-100
-40
BD546A
BD546B
BD546C
-60
Collector-Emitter
Voltage
VCEO
V
-80
-100
-5
VEBO
IC
Emitter-Base Voltage
V
A
Collector Current-Continuous
-15
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
3.5
PC
W
85
TJ
Junction Temperature
150
-65~150
℃
℃
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.47
35.7
℃/W
℃/W
Rth j-c
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD546/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
BD546
CONDITIONS
MIN
-40
TYP. MAX
UNIT
BD546A
BD546B
BD546C
-60
Collector-Emitter
Breakdown Voltage
IC= -30mA ;IB=0
V
-80
-100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BD546
IC= -5A; IB= -0.625A
IC= -10A; IB= -2A
IC= -10A; VCE= -4V
VCE= -40V; VBE= 0
VCE= -60V; VBE= 0
VCE= -80V; VBE= 0
VCE= -100V; VBE= 0
VCE= -30V; IB= 0
-0.8
-1.0
-1.8
V
V
V
)-1
sat
VCE(
)-2
sat
VBE(
)
on
BD546A
Collector
ICES
-0.4
mA
Cutoff Current
BD546B
BD56C
BD546/A
Collector
ICEO
-0.7
-1.0
mA
mA
Cutoff Current
BD546B/C
V
CE= -60V; IB= 0
IEBO
hFE-1
hFE-2
hFE-3
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
VEB= -5V; IC= 0
IC= -1A; VCE= -4V
IC= -5A; VCE= -4V
IC= -10A; VCE= -4V
60
25
10
Switching times
Turn-on Time
Turn-off Time
0.4
0.7
μs
μs
ton
toff
IC= -6A; IB1= -IB2= -0.6A;
RL= 5Ω; VBE( )= 4V
off
2
isc Website：www.iscsemi.cn
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