BD679A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD679A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD675A/677A/679A/681
DESCRIPTION
·
·With TO-126 package
·Complement to type BD676A/678A/680A/682
·DARLINGTON
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maxmum ratings (Ta=25℃)
SYMBO
PARAMETER
CONDITIONS
VALUE
45
UNIT
BD675A
BD677A
BD679A
BD681
60
VCBO
Collector-base voltage
Open emitter
Open base
V
80
100
45
BD675A
BD677A
BD679A
BD681
60
VCEO
Collector-emitter voltage
V
80
100
5
VEBO
IC
ICM
IB
Emitter -base voltage
Collector current
Open collector
V
A
4
Collector current-Peak
Base current
6
A
0.1
40
A
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
W
℃
℃
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD675A/677A/679A/681
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BD675A
BD677A
60
Collector-emitter
sustaining
VCEO(SUS)
IC=50mA; IB=0
V
voltage
BD679A
80
BD681
100
BD675A/677A/679A
BD681
IC=2A; IB=40mA
IC=1.5A; IB=30mA
IC=2A ; VCE=3V
IC=1.5A ; VCE=3V
VCB=45V; IE=0
VCB=60V; IE=0
VCB=80V; IE=0
VCB=100V; IE=0
VCE=45V; VBE=0
VCE=60V; VBE=0
VCE=80V; VBE=0
VCE=100V; VBE=0
VEB=5V; IC=0
2.8
2.5
2.5
2.5
Collector-emitter
saturation voltage
VCEsat
V
V
BD675A/677A/679A
BD681
Base-emitter
voltage
VBE(ON)
BD675A
BD677A
Collector
cut-off current
ICBO
0.2
mA
BD679A
BD681
BD675A
BD677A
Collector
cut-off current
ICEO
0.5
2
mA
mA
BD679A
BD681
IEBO
Emitter cut-off current
BD675A/677A/679A
BD681
IC=2A ; VCE=3V
IC=1.5A ; VCE=3V
750
750
hFE
DC current gain
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD675A/677A/679A/681
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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