概述
规格参数
数据手册BD744B 概述
isc Silicon PNP Power Transistor ISC的硅PNP功率晶体管 场效应晶体管
BD744B 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.79 |
BD744B 数据手册
通过下载BD744B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD744B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Collector Power Dissipation-
: PC= 90W@ IC= 25℃
·15A Continuous Collector Current
·Complement to Type BD743B
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
-90
-80
V
-5
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
-15
A
ICM
-20
A
IB
-5
A
Collector Power Dissipation
@ Ta=25℃
2
PC
W
Collector Power Dissipation
@ TC=25℃
90
TJ
Junction Temperature
150
-65~150
℃
℃
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.4
UNIT
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
℃/W
℃/W
Rth j-c
62.5
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD744B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
CONDITIONS
MIN
MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -30mA; IB= 0
-80
V
IC= -5A; IB= -0.5A
IC= -15A; IB= -5A
IC= -5A ; VCE= -4V
IC= -15A ; VCE= -4V
VCB= -90V; IE= 0
-1.0
-3.0
-1.0
-3.0
-0.1
-5.0
-0.1
-0.5
V
V
V
V
)-1
)-2
)-1
)-2
sat
VCE(
sat
VBE(
on
Base-Emitter On Voltage
VBE(
on
ICBO
Collector Cutoff Current
mA
VCB= -90V; IE= 0; TC= 125℃
VCE= -60V; IB= 0
ICEO
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
mA
mA
IEBO
VEB= -5V; IC= 0
hFE-1
hFE-2
hFE-3
IC= -1A ; VCE= -4V
IC= -5A ; VCE= -4V
IC= -15A ; VCE= -4V
40
20
5
DC Current Gain
150
DC Current Gain
Switching Times
Delay Time
20
ns
ns
ns
ns
td
tr
Rise Time
Storage Time
Fall time
120
600
300
IC= -5A; IB1= -IB2= -5A;
VBE(off)= 4.2V; RL= 6Ω;
tp= 20μs,DutyCycle≤ 2%
ts
tf
2
isc Website：www.iscsemi.cn
BD744B 相关器件
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