BD798 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BD798 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD798
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)
·Low Saturation Voltage
·Complement to Type BD797
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-60
UNIT
V
60
V
-5
V
Collector Curent-Continuous
Base Current-Continuous
-8
A
IB
-3
A
Collector Power Dissipation
TC=25℃
PC
65
W
℃
℃
Tj
Junction Temperature
150
-55~150
Storage Ttemperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.92
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD798
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
IC= -100mA; IB= 0
-60
V
IC= -3A; IB= -0.3A
-1
-1.6
-0.1
-1
V
V
VCE
(sat)
(on)
IC= -3A ; VCE= -2V
VCB= -60V; IE= 0
VBE
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
VEB= -5V; IC= 0
DC Current Gain
IC= -1A ; VCE= -2V
IC= -3A ; VCE= -2V
IC= -0.25A VC= -1V,ftest= 1MHz
40
25
3
DC Current Gain
Current-Gain—Bandwidth Product
MHz
isc Website：www.iscsemi.cn
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