BD898 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD898 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD896/898/900/902
DESCRIPTION
·With TO-220C package
·Complement to type BD895/897/899/901
·DARLINGTON
APPLICATIONS
·For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VAL
-45
UNIT
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
-60
VCBO
Collector-base voltage
Open emitter
Open base
V
-80
-100
-45
-60
VCEO
Collector-emitter voltage
V
-80
-100
-5
VEBO
IC
Emitter-base voltage
Collector current-DC
Base current
Open collector
V
A
-8
IB
-300
70
mA
TC=25℃
Ta=25℃
PT
Total power dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD896/898/900/902
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-45
TYP.
MAX
UNIT
BD896
BD898
BD900
BD902
-60
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-100mA, IB=0
V
-80
-100
VCEsat
VBE
Collector-emitter saturation voltage IC=-3A ,IB=-12mA
-2.5
-2.5
V
V
Base-emitter on voltage
IC=-3A ; VCE=-3V
VCB=-45V, IE=0
TC=100℃
-0.2
-2.0
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
VCB=-60V, IE=0
TC=100℃
-0.2
-2.0
ICBO
Collector cut-off current
mA
VCB=-80V, IE=0
TC=100℃
-0.2
-2.0
VCB=-100V, IE=0
-0.2
-2.0
TC=100℃
VCE=-30V, IB=0
VCE=-30V, IB=0
VCE=-40V, IB=0
ICEO
Collector cut-off current
-0.5
mA
mA
V
CE=-50V, IB=0
IEBO
hFE
VEC
ton
toff
Emitter cut-off current
DC current gain
Diode forward voltage
Turn-on time
VEB=-5V; IC=0
IC=-3A ; VCE=-3V
IE=-8A
-2
750
-3.5
V
1
5
μs
μs
IC=-3A ; IB1=-IB2=-12mA
VBE=3.5V;RL=10Ω;tp=20μs
Turn-off time
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
MAX
1.79
UNIT
℃/W
Rth j-c
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD896/898/900/902
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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