BD899A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD899A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD895A/897A/899A
DESCRIPTION
·With TO-220C package
·Complement to type BD896A/898A/900A
·DARLINGTON
APPLICATIONS
·For use in output stages in audio
equipment ,general amplifier,and
analogue switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VAL
UNIT
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
45
60
VCBO
Collector-base voltage
Open emitter
Open base
V
80
45
VCEO
Collector-emitter voltage
V
60
80
VEBO
IC
Emitter-base voltage
Collector current-DC
Base current
Open collector
5
V
A
8
IB
300
70
mA
TC=25℃
Ta=25℃
PT
Total power dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD895A/897A/899A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BD895A
BD897A
BD899A
Collector-emitter
breakdown voltage
V(BR)CEO
IC=100mA, IB=0
V
60
80
VCEsat
VBE
Collector-emitter saturation voltage IC=4A ,IB=16mA
2.8
2.5
V
V
Base-emitter on voltage
IC=4A ; VCE=3V
V
CB=45V, IE=0
TC=100℃
CB=60V, IE=0
0.2
2.0
BD895A
BD897A
BD899A
BD895A
BD897A
BD899A
V
Collector
cut-off current
0.2
2.0
ICBO
mA
TC=100℃
VCB=80V, IE=0
TC=100℃
0.2
2.0
VCE=30V, IB=0
VCE=30V, IB=0
Collector
cut-off current
ICEO
0.5
2
mA
mA
V
CE=40V, IB=0
IEBO
hFE
VEC
ton
Emitter cut-off current
DC current gain
Diode forward voltage
Turn-on time
VEB=5V; IC=0
IC=4A ; VCE=3V
IE=8A
750
3.5
V
1
5
μs
μs
IC=3A ; IB1=-IB2=12mA
VBE=-3.5V;RL=10Ω;tp=20μs
toff
Turn-off time
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
1.79
UNIT
℃/W
Rth j-c
Thermal resistance junction to case
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD895A/897A/899A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BD899A-6261
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
BD899A-6265
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
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