BDW23 [ISC]
isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
| 型号： | BDW23 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW23/A/B/C
DESCRIPTION
·Collector Current -IC= 6A
·High DC Current Gain-hFE= 750(Min)@ IC= 2A
·Complement to Type BDW24/A/B/C
APPLICATIONS
·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
45
UNIT
BDW23
BDW23A
BDW23B
BDW23C
BDW23
60
Collector-Emitter
Voltage
VCER
V
80
100
45
BDW23A
BDW23B
BDW23C
60
Collector-Emitter
Voltage
VCEO
V
80
100
5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
6
8
A
Base Current-Continuous
0.2
50
A
Collector Power Dissipation
PC
TJ
W
℃
℃
@ TC=25℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BDW23
BDW23A
BDW23B
BDW23C
60
Collector-Emitter
Breakdown Voltage
V(BR)CEO
IC= 100mA ;IB=0
V
80
100
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
C-E Diode Forward Voltage
BDW23
IC= 2A; IB= 8mA
IC= 6A; IB= 60mA
IC= 2A; IB= 8mA
IC= 1A ; VCE= 3V
IC= 6A ; VCE= 3V
IF= 2A
2
3
V
V
V
V
V
V
2.5
2.5
3
)-1
on
VBE(
)-2
on
VECF
1.8
VCE= 22V; IB= 0
VCE= 30V; IB= 0
VCE= 40V; IB= 0
VCE= 50V; IB= 0
VCB= 45V;IE= 0
VCB= 60V;IE= 0
VCB= 80V;IE= 0
BDW23A
Collector
ICEO
0.5
mA
Cutoff Current
BDW23B
BDW23C
BDW23
BDW23A
Collector
ICBO
0.2
mA
mA
Cutoff Current
BDW23B
BDW23C
Emitter Cutoff Current
DC Current Gain
VCB= 100V;IE= 0
IEBO
hFE-1
hFE-2
hFE-3
VEB= 5V; IC=0
2
IC= 1A ; VCE= 3V
IC= 2A ; VCE= 3V
IC= 6A ; VCE= 3V
1000
750
DC Current Gain
20000
DC Current Gain
100
2
isc Website：www.iscsemi.cn
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