BDW46 [ISC]

Silicon PNP Darlington Power Transistor; 硅PNP达林顿功率晶体管
BDW46
型号: BDW46
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon PNP Darlington Power Transistor
硅PNP达林顿功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:227K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDW46  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= -80V(Min)  
·High DC Current Gain  
: hFE= 1000(Min) @IC= -5A  
·Low Collector Saturation Voltage  
: VCE(sat)= -2.0V(Max.)@ IC= -5.0A  
= -3.0V(Max.)@ IC= -10A  
·Complement to Type BDW41  
APPLICATIONS  
·Designed for general purpose and low speed switching  
applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-80  
UNIT  
V
-80  
V
-5  
V
Collector Current-Continuous  
Base Current-Continuous  
-15  
A
IB  
-0.5  
85  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
W
TJ  
Junction Temperature  
150  
Storage Temperature Range  
-55~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.47  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDW46  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC= -30mA; IB= 0  
-80  
V
V
V
V
IC= -5A; IB= -10mA  
IC= -10A; IB= -50mA  
IC= -10A ; VCE= -4V  
-2.0  
-3.0  
-3.0  
)-1  
sat  
VCE(  
)-2  
sat  
VBE(  
)
on  
ICBO  
Collector Cutoff Current  
VCB= -80V; IE= 0  
-1.0  
mA  
ICEO  
IEBO  
hFE-1  
hFE-2  
fT  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
VCE= -40V; IB= 0  
-2.0  
-2.0  
mA  
mA  
VEB= -5V; IC= 0  
IC= -5A ; VCE= -4V  
1000  
250  
4
DC Current Gain  
IC= -10A ; VCE= -4V  
Current-Gain—Bandwidth Product  
Output Capacitance  
MHz  
pF  
IC= -3A; VCE= -3V; ftest= 1MHz  
IE= 0; VCB= -10V; ftest= 0.1MHz  
COB  
300  
2
isc Websitewww.iscsemi.cn  

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