BDW51C [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BDW51C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW51/A/B/C
DESCRIPTION
·Collector Current -IC= 15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A
80V(Min)- BDW51B; 100V(Min)- BDW51C
·Complement to Type BDW52/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
45
UNIT
BDW51
BDW51A
BDW51B
BDW51C
BDW51
60
Collector-Base
Voltage
VCBO
V
80
100
45
BDW51A
BDW51B
BDW51C
60
Collector-Emitter
Voltage
VCEO
V
80
100
5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
15
20
A
7
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
125
200
-65~200
W
℃
℃
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.4
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDW51/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW51
45
BDW51A
BDW51B
BDW51C
60
80
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 100mA; IB= 0
V
100
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BDW51
IC= 5A; IB= 0.5A
IC= 10A; IB= 2.5A
IC= 10A; IB= 2.5A
IC= 5A; VCE= 4V
1.0
3.0
2.5
1.5
V
V
V
V
)
on
V
CB= 45V; IE= 0
VCB= 45V; IE= 0; TC= 150℃
CB= 60V; IE= 0
VCB= 60V; E= ; TC150℃
CB= 8V; IE= 0
0.5
5.0
V
0.5
5.0
BDW51A
Collector
ICBO
mA
Cutoff Current
V
0.5
5.0
BDW51B
CB= 80V; IE= 0; TC= 150℃
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
0.5
5.0
BDW51C
BDW51
VCE= 22V; IB= 0
VCE= 30V; IB= 0
VCE= 40V; IB= 0
BDW51A
Collector
ICEO
1.0
mA
mA
Cutoff Current
BDW51B
BDW51C
Emitter Cutoff Current
DC Current Gain
VCE= 50V; IB= 0
IEBO
hFE-1
hFE-2
VEB= 5V; IC=0
2.0
IC= 5A; VCE= 4V
IC= 10A; VCE= 4V
20
5
150
DC Current Gain
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V
3
MHz
2
isc Website：www.iscsemi.cn
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