BDX16 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BDX16 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDX16
DESCRIPTION
·Contunuous Collector Current-IC= -3A
·Collector Power Dissipation-
: PC= 25W @TC= 25℃
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -140V(Min)
APPLICATIONS
·Designed for use in general purpose switching and linear
amplifier applications requiring high breakdown voltages.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
PARAMETER
VALUE
-160
-150
-140
-7
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage RBE= 100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Current-Peak
-3
A
ICM
-4
A
IB
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
-2
A
PC
25
W
℃
℃
TJ
200
-65~200
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
7.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDX16
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CER
V(BR)CEX
PARAMETER
CONDITIONS
MIN
-140
-150
-160
TYP.
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -100mA; IB= 0
IC= -100mA; RBE= 100Ω
IC= -100mA; VBE= 1.5V
IC= -0.5A; IB= -50mA
IC= -0.5A; VCE= -4V
V
V
-1.0
-1.7
V
VCE
(sat)
V
VBE(
)
on
VCE= -140V;VBE= 1.5V
VCE= -140V;VBE= 1.5V,TC=150℃
-1.0
-5.0
ICEX
Collector Cutoff Current
mA
mA
IEBO
hFE
fT
Emitter Cutoff Current
VEB= -7V; IC= 0
-1.0
80
DC Current Gain
IC= -0.5A; VCE-4V
IC= -0.2A; VCE= -10V
20
Current Gain-Bandwidth Product
4
MHz
2
isc Website：www.iscsemi.cn
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