概述
规格参数
数据手册BDX85B 概述
Silicon NPN Darlington Power Transistor 硅NPN达林顿功率晶体管 其他晶体管
BDX85B 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.6 |
| Is Samacsys： | N | Base Number Matches： | 1 |
BDX85B 数据手册
通过下载BDX85B数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A
80V(Min)- BDX85B; 100V(Min)- BDX85C
·Complement to Type BDX86/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX85
45
BDX85A
BDX85B
BDX85C
BDX85
60
80
VCBO
Collector-Base Voltage
V
100
45
BDX85A
BDX85B
BDX85C
60
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
80
100
5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
10
15
A
100
100
200
-65~200
mA
W
℃
℃
Collector Power Dissipation
@ TC=25℃
PC
TJ
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.75
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX85/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BDX85
BDX85A
BDX85B
BDX85C
60
Collector-Emitter
Sustaining Voltage
IC= 100mA; IB= 0
V
80
100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX85
IC= 4A; IB= 16mA
IC= 8A; IB= 40mA
IC= 8A; IB= 80mA
IC= 4A; VCE= 3V
2.0
4.0
4.0
2.8
V
V
V
V
)-1
sat
VCE(
)-2
sat
VBE(
)
sat
VBE(
)
on
VCB= 45V; IE= 0
VCB= 45V; IE= 0TC= 150℃
0.5
5.0
VB= 60; IE= 0
VB= 60V; IE= 0; TC= 150℃
0.5
5.0
BDX85A
Collector
ICBO
mA
Cutoff Current
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150℃
0.5
5.0
BDX85B
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
0.5
5.0
BDX85C
BDX85
VCE= 22V; IB= 0
VCE= 30V; IB= 0
VCE= 40V; IB= 0
BDX85A
Collector
ICEO
1.0
mA
mA
Cutoff Current
BDX85B
BDX85C
Emitter Cutoff Current
DC Current Gain
VCE= 50V; IB= 0
IEBO
hFE-1
hFE-2
hFE-3
VEB= 5V; IC= 0
IC= 3A; VCE= 3V
IC= 4A; VCE= 3V
IC= 8A; VCE= 4V
2.0
1000
750
DC Current Gain
18000
DC Current Gain
200
2
isc Website：www.iscsemi.cn
BDX85B 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BDX85C | SEME-LAB | Bipolar NPN Device | 获取价格 |
|
| BDX85C | CENTRAL | Power Transistors | 获取价格 |
|
| BDX85C | ISC | Silicon NPN Darlington Power Transistor | 获取价格 |
|
| BDX85LEADFREE | CENTRAL | Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN | 获取价格 |
|
| BDX86 | SEME-LAB | Bipolar PNP Device | 获取价格 |
|
| BDX86 | CENTRAL | Power Transistors | 获取价格 |
|
| BDX86 | ISC | Silicon PNP Darlington Power Transistor | 获取价格 |
|
| BDX86A | CENTRAL | Power Transistors | 获取价格 |
|
| BDX86A | ISC | Silicon PNP Darlington Power Transistor | 获取价格 |
|
| BDX86A | SEME-LAB | Bipolar PNP Device in a Hermetically sealed TO3 | 获取价格 |
|
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