BDX87C [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | BDX87C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A
80V(Min)- BDX87B; 100V(Min)- BDX87C
·Complement to Type BDX88/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX87
45
BDX87A
BDX87B
BDX87C
BDX87
60
80
VCBO
Collector-Base Voltage
V
100
45
BDX87A
BDX87B
BDX87C
60
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
80
100
5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
12
18
A
200
120
200
-65~200
mA
W
℃
℃
Collector Power Dissipation
@ TC=25℃
PC
TJ
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.45
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BDX87
BDX87A
BDX87B
BDX87C
60
Collector-Emitter
Sustaining Voltage
IC= 100mA; IB= 0
V
80
100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX87
IC= 6A; IB= 24mA
IC= 12A; IB= 120mA
IC= 12A; IB= 120mA
IC= 6A; VCE= 3V
2.0
3.0
4.0
2.8
V
V
V
V
)-1
sat
VCE(
)-2
sat
VBE(
)
sat
VBE(
)
on
VCB= 45V; IE= 0
VCB= 45V; IE= 0TC= 150℃
0.5
5.0
VB= 60; IE= 0
VB= 60V; IE= 0; TC= 150℃
0.5
5.0
BDX87A
Collector
ICBO
mA
Cutoff Current
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 150℃
0.5
5.0
BDX87B
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150℃
0.5
5.0
BDX87C
BDX87
VCE= 22V; IB= 0
VCE= 30V; IB= 0
VCE= 40V; IB= 0
BDX87A
Collector
ICEO
1.0
mA
mA
Cutoff Current
BDX87B
BDX87C
Emitter Cutoff Current
DC Current Gain
VCE= 50V; IB= 0
IEBO
hFE-1
hFE-2
hFE-3
VEB= 5V; IC= 0
2.0
IC= 5A; VCE= 3V
IC= 6A; VCE= 3V
IC= 12A; VCE= 3V
1000
750
DC Current Gain
18000
DC Current Gain
100
2
isc Website：www.iscsemi.cn
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