BU506D [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管


型号：	BU506D
厂家：	INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：	Silicon NPN Power Transistors 硅NPN功率晶体管晶体晶体管
文件：	总3页 (文件大小：55K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506D

DESCRIPTION

·With TO-220C package

·High voltage

·Fast switching speed

·With integrated efficiency diode

APPLICATIONS

·Horizontal deflection circuits of colour

TV receivers.

·Line-operated switch-mode applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (Pulse)

Base current

CONDITIONS

Open emitter

VALUE

UNIT

1500

Open base

700

Open collector

I_CM

I_B

I_BM

Base current(peak)

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-65-150

℃

T_j

T_stg

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506D

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

V_CEO(SUS)

V_CEsat

V_BEsat

h_FE

PARAMETER

Collector-emitter sustaining voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current gain

CONDITIONS

I_C=100mA; I_B=0; L=25mH

I_C=3A; I_B=1.33A

MIN

TYP.

MAX

UNIT

700

1.0

1.3

I_C=3A; I_B=1.33A

I_C=0.1A ; V_CE=5V

_CE=rated; V_BE=0

0.5

1.0

I_CES

Collector cut-off current

T_C=125℃

I_EBO

Emitter cut-off current

V_EB=6V; I_C=0

200

2.2

V_F

Diode forward voltage

I_F=3A;

1.5

Switching times

t_s

t_f

Storage time

6.5

0.7

μs

I_CM= 3 A; I_{B( )}= 1A

L_B= 12μH

end

Fall time

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BU506D

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)

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