BU606 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU606 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU606
DESCRIPTION
·High Voltage: VCEV= 400V(Min)
·Fast Switching Speed-
: tf= 0.75μs(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEV
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
400
400
200
6
UNIT
V
V
V
V
Collector Current-Continuous
Collector Current-Peak Repetitive
Collector Current- Peak (10ms)
Base Current
7
A
ICP
10
A
ICP
15
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
90
W
℃
℃
TJ
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU606
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)
VBE(sat)
ICES
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
IC= 100mA ;IB= 0
200
V
IC= 5A; IB= 0.5A
IC= 5A; IB= 0.5A
1.0
1.2
V
V
V
CE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150℃
5.0
0.1
1.0
mA
mA
MHz
pF
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
1.0
fT
Current-Gain—Bandwidth Product
Output Capacitance
10
IC= 0.5A ; VCE= 10V, ftest= 20MHz
IE= 0; VCB= 10V; ftest= 1.0MHz
COB
80
IC= 5A; IB1= -IB2= 0.5A, L= 150μH
VCC= 40V
Fall Time
0.75
μs
tf
2
isc Website：www.iscsemi.cn
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