BU808 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU808 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU808
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in three-phase AC motor control systems
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector- Emitter Voltage VBE=0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
700
5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
12
A
ICM
20
A
IB
8
A
IBM
12
A
Collector Power Dissipation
@TC=25℃
PC
160
150
-65~150
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.78
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU808
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.2A ;IB= 0; L=25 mH
IC= 9A; IB= 4A
MIN
TYP. MAX UNIT
VCEO(SUS)
700
V
1
3
V
V
VCE
(sat)-1
(sat)-2
IC= 12A; IB= 6A
VCE
IC= 9A; IB= 4A
1.5
V
VBE
(sat)
VCE= VCESmax;VBE= 0
1
4
ICES
mA
mA
VCE= VCESmax;VBE= 0; TJ= 125℃
IEBO
hFE
IS/B
COB
fT
Emitter Cutoff Current
VEB= 5V; IC=0
10
DC Current Gain
IC= 1A; VCE= 5V
8
Second Breakdown Current
Output Capacitance
VCE= 100V; tp= 1 s
0.4
A
200
7
pF
IE= 0; VCB= 10V, ftest= 1MHz
IC= 0.1A ; VCE= 5V, ftest= 5MHz
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-On Time
1.5
4.5
0.5
μs
μs
μs
ton
IC= 9A; IB1= -IB2= 4A
Storage Time
Fall Time
ts
tf
2
isc Website：www.iscsemi.cn
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