BU921PFI [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | BU921PFI |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU921PFI
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·Designed for automotive ignition applications and inverter
circuits for motor control.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage VBE= 0
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Crrent
VALUE
450
400
5
UNIT
V
V
V
10
A
ICM
Collector Current-peak
Base Current
15
A
IB
5
A
Collector Power Dissipation
@TC=25℃
PC
55
W
℃
℃
Tj
Junction Temperature
150
-65~150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Thermal Resistance, Junction to Case
2.27 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU921PFI
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
400
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 5A; IB= 50mA
IC= 7A; IB= 140mA
IC= 5A; IB= 50mA
IC= 7A; IB= 140mA
1.8
1.8
2.2
2.5
V
VCE
(sat)-1
V
V CE
(sat)-2
(sat)-1
V
VBE
V
V BE
(sat)-2
VCE= 450V; VBE= 0
VCE= 450V; VBE= 0;Tj= 125℃
0.25
0.5
ICES
mA
mA
mA
V
ICEO
IEBO
VECF
Collector Cutoff Current
VCE= 400V; IB= 0
VEB= 5V; IC= 0
IF= 7A
0.25
50
Emitter Cutoff Current
C-E Diode Forward Voltage
2.5
isc Website：www.iscsemi.cn
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