BUS23C [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | BUS23C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUS23B/C
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)-BUS23B
450V (Min)-BUS23C
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
750
850
400
UNIT
BUS23B
BUS23C
BUS23B
BUS23C
Collector- Emitter
Voltage(VBE= 0)
VCES
V
Collector-Emitter
Voltage
VCEO
V
450
VEBO
IC
ICM
IB
Emitter-Base Voltage
9
15
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
30
A
6
A
IBM
PC
Tj
9
A
Collector Power Dissipation
@TC=25℃
175
150
-65~150
W
℃
℃
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
0.7
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUS23B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP. MAX UNIT
BUS23B
BUS23C
BUS23B
BUS23C
BUS23B
BUS23C
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 0.1A ; IB= 0; L= 25mH
V
IC= 10A; IB= 1.33A
IC= 10A; IB= 1.67A
IC= 10A; IB= 1.33A
IC= 10A; IB= 1.67A
VCE=VCESMmax; VBE= 0
VEB= 9V; IC= 0
1.5
Collector-Emitter
Saturation Voltage
VCE(sat)
V
1.5
1.6
Base-Emitter
Saturation Voltage
VBE(sat)
V
1.6
ICES
IEBO
hFE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
1
mA
mA
10
IC= 1.5A ; VCE= 5V
25
Switching Times , Resistive Load
Turn-On Time
Storage Time
Fall Time
0.7
2.0
μs
μs
μs
ton
tstg
tf
For BUS23B
IC= 10A ;IB1= -IB2= 1.33A
For BUS23C
IC= 10A; IB1= -IB2= 1.67A
0.27
isc Website：www.iscsemi.cn
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