BUT12 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BUT12 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT12
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
850
400
V
9
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
8
20
A
ICM
A
IB
4
A
IBM
6
A
Collector Power Dissipation
@TC=25℃
PC
125
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT12
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.1A; IB= 0, L= 25mH
IC= 6A; IB= 1.2A
MIN
TYP. MAX UNIT
400
V
1.5
1.5
V
V
)
sat
IC= 6A; IB= 1.2A
VBE(
)
sat
VCE=RatedVCES ;VBE= 0
VCE=RatedVCES ;VBE= 0;TC=125℃
1
3
ICES
mA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
VEB= 9V; IC= 0
10
35
35
DC Current Gain
IC= 10mA; VCE= 5V
IC= 1A; VCE= 5V
10
10
DC Current Gain
Switching Times ;Resistive Load
Turn-on Time
Storage Time
Fall Time
1.0
4.0
0.8
μs
μs
μs
ton
IC= 6A; IB1= -IB2=1.2A
ts
tf
isc Website：www.iscsemi.cn
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