BUT46A [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | BUT46A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT46A
DESCRIPTION
·High Voltage
·High Speed Switching
APPLICATIONS
·General purpose switching
·Switch mode power supply
·Electronic ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1000
40
7
UNIT
V
V
V
Collector Crrent-Continuous
Base Current-Peak
5
A
IB
3
A
Collector Power Dissipation
@TC=25℃
PC
100
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.76
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT46A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 0.1A; IB= 0
450
V
IC= 2A; IB= 0.4A
IC= 3A; IB= 0.6A
1.5
5.0
1.3
V
V
)-1
sat
VCE(
)-2
sat
IC= 2A; IB= 0.4A
VCB=1000V; IE= 0
V
VBE(
)
sat
0.1
1.0
ICBO
mA
mA
V
CB=1000V; IE= 0; TC=125℃
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1.0
35
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
10
isc Website：www.iscsemi.cn
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