BUW50 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUW50 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW50
DESCRIPTION
·With TO-3PN package
·High speed switching
·Low saturation voltage
APPLICATIONS
·Designed for use in general purpose
power amplifier application
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings (Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
250
UNIT
V
Open base
125
V
Open collector
7
V
25
A
ICM
Collector current-peak
Totalpower dissipation
Junction temperature
Storage temperature
50
A
PD
TC=25℃
150
W
℃
℃
Tj
175
Tstg
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
1.0
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW50
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat
PARAMETER
CONDITIONS
MIN
125
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=0.2A ;L=25mH
IE=20mA ;IC=0
IC=10A; IB=0.5A
IC=20A; IB=2A
IC=20A; IB=2A
VCE=250V;VBE=-1.5V
VEB=5V; IC=0
V
0.9
1.0
1.6
0.1
1.0
V
V
V
ICEV
mA
mA
IEBO
Emitter cut-off current
Switching times
ton
Turn-on time
1.9
1.5
0.5
μs
μs
μs
VCC=60V;IC=10A;
IB1 =1.0A;Pw=20μs
ts
Storage time
Fall time
tf
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUW50
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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