BUX18B [ISC]
isc Silicon NPN Power Transistor;
| 型号： | BUX18B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX18/A/B/C
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUX18
= 325V(Min)- BUX18A
= 375V(Min)- BUX18B
= 425V(Min)- BUX18C
·High Switching Speed
·High Power Dissipation
APPLICATIONS
·Designed for use in off-line power supplies and is also well
suited for use in a wide range of inverter or converter circuits
and pulse-width-modulated regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
250
350
400
475
200
325
375
425
6
UNIT
BUX18
BUX18A
BUX18B
BUX18C
BUX18
Collector-Emitter Voltage
VBE= -1.5V
VCEV
V
BUX18A
BUX18B
BUX18C
VCEO(SUS) Collector-Emitter Voltage
V
VEBO
IC
Emitter-Base Voltage
V
A
Collector Current-Continuous
8
PC
120
200
-65~200
W
℃
℃
Collector Power Dissipation@TC=25℃
Junction Temperature
TJ
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.17
℃/W
Rth j-c
1
isc website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX18/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
BUX18
CONDITIONS
MIN
200
325
375
425
6
TYP. MAX UNIT
BUX18A
BUX18B
BUX18C
Collector-Emitter
Sustaining Voltage
IC= 200mA ; IB= 0
V
V
Emitter-Base Breakdown Voltage
BUX18
IE= 1mA ; IC= 0
IC= 6A; IB= 1.2A
IC= 5A; IB= 1A
IC= 4A; IB= 0.8A
IC= 6A; VCE= 3V
Collector-Emitter
BUX18A
2.5
1.5
V
V
VCE
(sat)
Saturation Voltage
BUX18B/C
BUX18
Base-Emitter
VBE
(on)
On Voltage
BUX18A/B/C IC= 4A; VCE= 3V
V
CE= 250V;VBE= -1.5V
3
10
BUX18
VCE= 250V;VBE= -1.5V,TC= 150℃
V
CE= 350V;VBE= -1.5V
3
10
BUX18A
BUX18B
BUX18C
VCE= 350V;VBE= -1.5V,TC= 150℃
Collector
Cutoff Current
ICEV
mA
mA
VCE= 400V;VBE= -1.5V
VCE= 400V;VBE= -1.5V,TC= 150℃
3
5
VCE= 475V;VBE= -1.5V
3
5
VCE= 475V;VBE= -1.5V,TC= 150℃
IEBO
Emitter Cutoff Current
DC Current Gain
VEB= 6V; IC=0
1.0
BUX18
IC= 6A; VCE= 3V
IC= 5A; VCE= 3V
IC= 4A; VCE= 3V
7
hFE
BUX18A
BUX18B/C
10
2
isc website：www.iscsemi.cn
相关型号：
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