BUX67 [ISC]
isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
| 型号： | BUX67 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistors |
| 文件： | 总2页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX67/A/B/C
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD=35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
200
300
350
400
150
250
300
350
6
UNIT
BUX67
BUX67A
BUX67B
BUX67C
BUX67
VCBO
Collector-Base Voltage
V
BUX67A
BUX67B
BUX67C
VCEO
Collector-Emitter Voltage
V
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
V
A
2.0
5.0
A
1.0
A
PC
TJ
Collector Power Dissipation@TC=25℃
Junction Temperature
35
W
℃
℃
200
-65~200
Storage Temperature
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX67/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
150
250
300
350
TYP.
MAX
UNIT
BUX67
BUX67A
BUX67B
BUX67C
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC=200mA ; IB=0
V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
BUX67
IC= 1A; IB= 0.15A
IC= 1A; IB= 0.15A
VCB= 150V; IE= 0
VCB= 250V; IE= 0
VCB= 300V; IE= 0
VCB= 350V; IE= 0
VEB= 6V; IC=0
2.5
1.4
1.0
1.0
1.0
1.0
0.5
150
V
V
VCE
VBE
(sat)
(sat)
BUX67A
Collector
ICBO
mA
Cutoff Current
BUX67B
BUX67C
Emitter Cutoff Current
IEBO
hFE
fT
mA
DC Current Gain
IC= 1A ; VCE= 5V
IC= 0.5A ; VCE= 10V
10
Current Gain-Bandwidth Product
25
MHz
2
isc Website：www.iscsemi.cn
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