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D44D5 [ISC]

isc Silicon NPN Darlington Power Transistors; ISC的硅NPN达林顿功率晶体管
D44D5
型号： D44D5
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Darlington Power Transistors
ISC的硅NPN达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：114K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistors  
D44D1/2/3/4/5/6  
DESCRIPTION  
·High DC Current Gain-hFE= 2000(Min)@ IC= 1A  
·Complement to Type D45D1/2/3/4/5/6  
APPLICATIONS  
·Designed for use in power linear and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
D44D1  
D44D2  
D44D3  
D44D4  
D44D5  
D44D6  
D44D1  
D44D2  
D44D3  
D44D4  
D44D5  
D44D6  
-60  
-80  
Collector-Emitter  
Voltage  
VCEV  
V
-100  
-120  
-60  
-80  
Collector-Emitter  
Voltage  
VCEO  
V
-100  
-120  
-5  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
-12  
-20  
A
-0.5  
125  
A
PC  
TJ  
Collector Power Dissipation@TC=25℃  
Junction Temperature  
W
℃
℃
150  
Storage Temperature Range  
-65~150  
Tstg  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistors  
D44D1/2/3/4/5/6  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
TYP. MAX UNIT  
D44D1  
D44D2  
D44D3  
D44D4  
D44D5  
D44D6  
-60  
-80  
Collector-Emitter  
Sustaining Voltage  
IC= -30mA ;IB=0  
V
-100  
-120  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
C-E Diode Forward Voltage  
Collector Cutoff Current  
IC= -5A; IB= -20mA  
IC= -10A; IB= -100mA  
IC= -5A ; VCE= -4V  
IF= -5A  
-2.0  
-3.0  
-2.5  
-2.0  
-0.2  
V
V
)-1  
sat  
VCE(  
)-2  
sat  
V
VBE(  
)
on  
VECF-1  
ICEO  
ICBO  
IEBO  
hFE  
V
VCE= 1/2VCEOmax; IB= 0  
mA  
mA  
mA  
VCB= VCBOmax;IE= 0  
-0.4  
-2.0  
Collector Cutoff Current  
VCB= 1/2VCBOmax;IE= 0;TC= 150℃  
Emitter Cutoff Current  
VEB= -5V; IC=0  
-5  
DC Current Gain  
IC= -1A ; VCE= -2V  
2000  
2
isc Website：www.iscsemi.cn  

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