IIPD60R600E6 [ISC]
N-Channel MOSFET Transistor;
| 型号： | IIPD60R600E6 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤170mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
14
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
A
IDM
51
A
PD
76
W
℃
℃
150
Tj
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
PARAMETER
MAX
UNIT
Channel-to-case thermal resistance
℃/W
℃/W
1.65
62
Channel-to-ambient thermal resistance
Rth(j-a)
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
600
3.5
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
Gate Threshold Voltage
4.5
0.17
0.1
1
V
VDS=VGS; ID=0.3mA
VGS=10V; ID=6A
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
Ω
VGS=20V; VDS=0V
VDS=600V; VGS= 0V
IF=6A, VGS = 0V
μA
μA
V
IDSS
VSD
1
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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