MJ802 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | MJ802 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ802
DESCRIPTION
·High DC Current Gain-
: hFE= 25-100@IC= 7.5A
·Excellent Safe Operating Area
·Complement to Type MJ4502
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
100
90
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
4
V
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
30
A
IB
7.5
A
PC
200
150
-65~200
W
℃
℃
TJ
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.875
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ802
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
MIN
TYP
MAX
UNIT
V
VCEO(SUS)
IC=0.2A ;IB=0
90
IC=7.5A; IB=0.75A
IC=7.5A; IB=0.75A
IC=7.5A ; VCE=2V
0.8
1.3
1.3
V
VCE
VBE
(sat)
V
(sat)
V
VBE
(on)
V
CB=100V; IE=0
1.0
5.0
ICBO
Collector Cutoff Current
mA
mA
VCB=100V; IE=0;TC=150℃
IEBO
hFE
fT
Emitter Cutoff current
VEB=4V; IC=0
1.0
DC Current Gain
IC=7.5A ; VCE=2V
25
100
Current-Gain—Bandwidth Product
IC=1A;VCE=10V;f=1.0MHz
2.0
MHz
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ802
isc Website：www.iscsemi.cn
相关型号：
MJ802LEADFREE
Power Bipolar Transistor, 30A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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