MJ8501 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | MJ8501 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ8501
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
VCEV
Collector-Emitter Voltage
1400
VCEO(SUS) Collector-Emitter Voltage
800
V
VEBO
IC
ICM
IB
Emitter-Base Voltage
8
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
2.5
A
5
2
A
A
IBM
PC
TJ
4
A
Collector Power Dissipation@TC=25℃
Junction Temperature
125
200
-65~200
W
℃
℃
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.4
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ8501
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC=100mA ; IB=0
MIN
TYP. MAX UNIT
800
V
IC= 1A; IB= 0.33A
IC= 1A; IB= 0.33A,TC=100℃
2.0
V
1
(sat)-
3.0
IC= 2.5A; IB= 1A
5.0
V
VCE
VBE
2
(sat)-
IC= 1A; IB= 0.33A
IC= 1A; IB= 0.33A,TC=100℃
1.5
1.5
V
(sat)
VCEV=1400V;VBE(off)=1.5V
0.25
5.0
ICEV
mA
mA
mA
V
CEV=1400V;VBE =1.5V;TC=150℃
(off)
ICER
IEBO
hFE
Collector Cutoff Current
VCE= 1400V; RBE= 50Ω,TC= 100℃
5.0
1.0
Emitter Cutoff Current
VEB= 7.0V; IC=0
DC Current Gain
IC= 0.5A ; VCE= 5V
7.5
50
COB
Output Capacitance
250
pF
IE= 0; VCB= 10V; ftest=1.0kHz
Switching times;Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
45
200
ns
ns
ns
ns
td
tr
200
2000
IC= 1A , VCC= 500V;
IB1= 0.33A;tp= 50μs; VBE(off)= 5V
Duty Cycle≤2.0%
1000 4000
500 2000
ts
tf
2
isc Website：www.iscsemi.cn
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