MJE12007 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJE12007 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
DESCRIPTION
·
·With TO-220 package
·High voltage
·Low saturation voltage
APPLICATIONS
Suited for line-operated switchmode
applications such as:
·Fluorescent lamp ballasts
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
VALUE
1500
750
9
UNIT
V
Open emitter
Open base
V
Open collector
V
2.5
A
ICM
5
A
PD
TC=25℃
80
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
MAX
UNIT
Rth j-C
1.56
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICEV
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA; IB=0
750
IC=1A ;IB=0.5A
IC=2A ;IB=1A
IC=1A ;IB=0.5A
IC=2A ;IB=1A
1.0
2.5
1.5
2.8
V
V
V
V
VCEV=RatedValue; VBE(off)=-1.5V
TC=100℃
0.25
2.5
mA
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.25
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=2A ; VCE=5V
3
hFE-2
DC current gain
2.5
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE12007
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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