MJE12007 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
MJE12007
型号: MJE12007
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
DESCRIPTION  
·
·With TO-220 package  
·High voltage  
·Low saturation voltage  
APPLICATIONS  
Suited for line-operated switchmode  
applications such as:  
·Fluorescent lamp ballasts  
·Inverters  
·Solenoid and relay drivers  
·Motor controls  
·Deflection circuits  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Total power dissipation  
Junction temperature  
Storage temperature  
CONDITIONS  
VALUE  
1500  
750  
9
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
2.5  
A
ICM  
5
A
PD  
TC=25  
80  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
MAX  
UNIT  
Rth j-C  
1.56  
/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEsat-1  
VCEsat-2  
VBEsat-1  
VBEsat-2  
ICEV  
PARAMETER  
Collector-emitter sustaining voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC=50mA; IB=0  
750  
IC=1A ;IB=0.5A  
IC=2A ;IB=1A  
IC=1A ;IB=0.5A  
IC=2A ;IB=1A  
1.0  
2.5  
1.5  
2.8  
V
V
V
V
VCEV=RatedValue; VBE(off)=-1.5V  
TC=100℃  
0.25  
2.5  
mA  
mA  
IEBO  
Emitter cut-off current  
VEB=9V; IC=0  
0.25  
hFE-1  
DC current gain  
IC=1A ; VCE=5V  
IC=2A ; VCE=5V  
3
hFE-2  
DC current gain  
2.5  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE12007  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)  
3

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