MJE15031 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | MJE15031 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE15031
DESCRIPTION
·
·With TO-220C package
·Complement to type MJE15028/30
·High transition frequency
·DC Current Gain Specified to 4.0 Amperes
hFE = 40 (Min) @ IC =- 3.0 Adc
hFE = 20 (Min) @ IC = -4.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
-150
-150
-5
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Open base
V
Open collector
V
-8
A
ICM
-16
A
IB
-2
A
Ta=25℃
TC=25℃
2
PD
Total power dissipation
W
50
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
MAX
2.5
UNIT
℃/W
℃/W
Rth j-C
Rth j-A
62.5
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE15031
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
VCEO(SUS) Collector-emitter sustaining voltage
IC=-10mA ;IB=0
-150
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1A ;IB=-0.1A
-0.5
-1.0
-10
V
VBE
IC=-1A ; VCE=-2V
VCB=-150V; IE=0
VCE=-150V; IB=0
VEB=-5V; IC=0
V
ICBO
ICEO
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
μA
mA
μA
-0.1
-10
IC=-0.1A ; VCE=-2V
IC=-2A ; VCE=-2V
IC=-3A ; VCE=-2V
IC=-4A ; VCE=-2V
IC=-0.5A;VCE=-10V;f=10MHz
40
40
40
20
30
DC current gain
DC current gain
DC current gain
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE15031
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE15031
4
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