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MJE170 [ISC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
MJE170
型号： MJE170
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 开关 局域网
文件： 总3页 (文件大小：40K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE170/171/172  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type MJE180/181/182  
APPLICATIONS  
·For low power audio amplifier and low  
current high speed switching applications  
PINNING (see Fig.2)  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute Maximun Ratings (Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
MJE170  
MJE171  
MJE172  
MJE170  
MJE171  
MJE172  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-40  
VCEO  
Collector-emitter voltage  
Open base  
V
-60  
-80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Collector current-peak  
Base current  
Open collector  
-7  
V
A
A
A
-3  
-6  
-1  
Ta=25℃  
TC=25℃  
1.5  
PC  
Collector power dissipation  
W
12.5  
150  
-65~150  
Tj  
Junction temperature  
Storage temperature  
℃
℃
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE170/171/172  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
-40  
-60  
-80  
TYP.  
MAX  
UNIT  
MJE170  
MJE171  
MJE172  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=-10mA;IB=0  
V
VCEsat-1  
VCEsat-2  
VCEsat-3  
VBEsat-1  
VBEsat-2  
VBE  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
IC=-500mA ;IB=-50mA  
IC=-1.5A ;IB=-150mA  
IC=-3A ;IB=-600mA  
IC=-1.5A ;IB=-150mA  
IC=-3A ;IB=-600mA  
IC=-500mA ; VCE=-1V  
-0.3  
-0.9  
-1.7  
-1.5  
-2.0  
-1.2  
V
V
V
V
V
V
V
CB=-60V; IE=0  
-0.1  
-0.1  
μA  
mA  
MJE170  
TC=150℃  
V
CB=-80V; IE=0  
-0.1  
-0.1  
μA  
mA  
ICBO  
Collector cut-off current  
MJE171  
MJE172  
TC=150℃  
V
CB=-100V; IE=0  
-0.1  
-0.1  
μA  
mA  
TC=150℃  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
Emitter cut-off current  
DC current gain  
VEB=-7V; IC=0  
-0.1  
250  
μA  
IC=-100mA ; VCE=-1V  
IC=-500mA ; VCE=-1V  
IC=-1.5A ; VCE=-1V  
50  
30  
12  
50  
DC current gain  
DC current gain  
Transition frequency  
Output capacitance  
IC=-100mA ; VCE=-10V  
IE=0 ; VCB=-10V,f=0.1MHz  
MHz  
pF  
COB  
50  
2
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE170/171/172  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

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