MJF18006 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | MJF18006 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
DESCRIPTION
·
·With TO-220F package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
CONDITIONS
Open emitter
VALUE
UNIT
V
1000
Open base
450
V
Open collector
9
V
6
A
ICM
15
A
IB
4
8
A
IBM
Base current-Peak
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
Tstg
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
3.12
62.5
UNIT
℃/W
℃/W
Rth j-C
Rth j-A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.1A; L=25mH
450
V
V
V
V
V
IC=1.5A ;IB=0.15A
Collector-emitter saturation voltage
TC=125℃
IC=3A ;IB=0.6A
Collector-emitter saturation voltage
TC=125℃
0.6
0.65
0.7
0.8
VCEsat-2
VBEsat-1
Base-emitter saturation voltage
Base-emitter saturation voltage
IC=1.5A; IB=0.15A
IC=3A; IB=0.6A
1.2
1.3
0.1
0.5
0.1
0.1
0.1
34
VBEsat-2
VCES=RatedVCES;
VEB=0
ICES
Collector cut-off current
mA
TC=125℃
VCES=800V
ICEO
IEBO
hFE-1
hFE-2
hFE-3
hFE-4
fT
Collector cut-off current
Emitter cut-off current
DC current gain
VCE=RatedVCEO; IB=0
VEB=9V; IC=0
mA
mA
IC=0.5A ; VCE=5V
14
6
DC current gain
IC=3A ; VCE=1V
DC current gain
IC=1.5A ; VCE=1V
11
10
DC current gain
IC=10mA ; VCE=5V
IC=0.5A ; VCE=10V;f=1.0MHz
IE=0 ; VCB=10V;f=1.0MHz
Transition frequency
Collector outoput capacitance
14
75
MHz
pF
COB
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
ton
toff
ton
toff
Turn-on time
Turn-off time
Turn-on time
Turn-off time
90
1.7
0.2
1.2
180
2.5
0.3
2.5
ns
VCC=300V ,IC=3A
IB1=0.6A; IB2=1.5A
μs
μs
μs
VCC=300V ,IC=1.3A
IB1=0.13A; IB2=0.65A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJF18006
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
©2020 ICPDF网 联系我们和版权申明