PMD10K80 [ISC]
Silicon NPN Darlingtion Power Transistor; 硅NPN Darlingtion功率晶体管
| 型号： | PMD10K80 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlingtion Power Transistor |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD10K80
DESCRIPTION
·High DC current gain
·Collector-Emitter Sustaining Voltage-
V
CEO(SUS)= 80V(Min)
·Complement to type PMD11K80
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
80
UNIT
V
80
5.0
V
Collector Curren-Coninuous
Collector Current-Peak
Base Current
12
A
ICP
20
A
IB
0.2
A
PC
Collector Power Dissipation@TC=25℃
Junction Temperature
150
150
-65~200
W
℃
℃
Tj
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
ThermalResistance, Junction to Case
1.17
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
PMD10K80
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff current
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
IC= 100mA ; IB= 0
80
IC= 6A; IB= 24mA
IC= 6A; IB= 24mA
IC= 6A; VCE= 3V
2.0
2.8
2.8
V
VCE
(sat)
(sat)
V
VBE
V
VBE
(on)
VCE= 80V; RBE= 1KΩ
VCE= 80V; RBE= 1KΩ, TC=150℃
1.0
5.0
ICER
mA
mA
IEBO
hFE
fT
Emitter Cut-off current
VEB= 5V; IC= 0
2.0
DC Current Gain
IC= 6A; VCE= 3V
1000
4
20000
Current-Gain—Bandwidth Product
Output Capacitance
IC5A; VCE= 3V, f= 1kHz
IE= 0; VCB= 10V; ftest= 1.0MHz
MHz
pF
COB
300
2
isc Website：www.iscsemi.cn
相关型号：
PMD10K80LEADFREE
Power Bipolar Transistor, 12A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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